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Keywords Czochralski method;Sapphire crystal;Temperature gradient;Stress; 提拉法;白宝石单晶;温度梯度;应力;
Keywords Czochralski method;auto extending shoulder;top floating steelyard;optiming design;inverted simulate; 提拉法;自动扩肩;上“浮秤”;优化设计;逆向模拟;
Keywords Czochralski method;numerical simulation;crystal growth;convection;interface shape; 提拉法;数值模拟;晶体生长;对流;界面形状;
Single crystals of CsB3O5(CBO) were grown by Kyropoulos method and Czochralski method respectively. 采用泡生法和提拉法生长出三硼酸铯（化学式 Cs B3 O5 ，简称 C B O）晶体，研究了晶体生长工艺条件及晶体生长形态。
The congruent LiNbO_3 crystal with large size can be grown by the Czochralski method. 铌酸锂晶体是一种集非线性、电光、压电、光弹、光折变、自倍频等功能于一体的功能晶体。
The growth behavior and crystalline quality of LiGaO_2 single crystal grown by Czochralski method were investigated. 研究了提拉法生长的镓酸锂单晶的生长习性和结晶质量。
The recombination-type semi-insulating gallium arsenide material of high resistivity is prepared by B2O3 liquid encapsulated Czochralski method (LEC). 采用B_2O_3液封直拉法制备出高电阻率的复合型半绝缘砷化镓。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method(MCZ). 多晶硅用直拉法(CZ)或磁场直拉法(MCZ)拉制成单晶硅棒。
The CBO crystal grown by Czochralski method is 20mm in diameter and 30mm high,optimal parameters for crystal growth are:temperature gradients in liquid surface is 60? 用提拉法生长出?20mm ×30m m 的 C B O 晶体；
Keywords stress birefringence;YAG crystal;czochralski method; 应力双折射;YAG晶体;提拉法;
Keywords crystal seed;Czochralski method;cleat shape; 晶种;提拉法;劈形;
Keywords Czochralski silicon;grow-in oxygen precipitation;DZ;RTP; 直拉硅;原生氧沉淀;洁净区;快速热处理;
Keywords potassium tantalate;crystal growth;growth defect;Czochralski method; 钽酸钾;晶体生长;生长缺陷;提拉法;
ouble crucible Czochralski method 双坩埚提拉法
Czochralski method crystal growth; 提拉法晶体生长;
liquid encapsulation Czochralski method 液封直拉法
Czochralski method crystal growth 提拉法晶体生长
magnetic field Czochralski method 磁场直拉法
double crucible Czochralski method 双坩埚提拉法
Keywords LYSO crystal;scintillator;Czochralski method;characterization; 闪烁晶体;提拉法;光学特性;